Method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide
The method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide, epitactically depositing a layer of monocrystalline gallium nitride with a thickness of 50 mu m to 2 mm on the layer of monocrystalline 3C-silicon carbide, and removing the substrate from monocrystalline silicon. The superficial layer is produced from monocrystalline 3C-silicon carbide in which carbon-ions are implanted in a pre-determined depth of the substrate from monocrystalline silicon. The method for the production of a disc comprising gallium nitride, comprises providing a substrate from monocrystalline silicon with a superficial layer of monocrystalline 3C-silicon carbide, epitactically depositing a layer of monocrystalline gallium nitride with a thickness of 50 mu m to 2 mm on the layer of monocrystalline 3C-silicon carbide, and removing the substrate from monocrystalline silicon. The superficial layer is produced from monocrystalline 3C-silicon carbide in which carbon-ions are implanted in a pre-determined depth of the substrate from monocrystalline silicon. The substrate from monocrystalline silicon is thermally treated with the implanted carbon so that a buried layer is formed from monocrystalline 3C-silicon carbide, and the layer lying over the buried layer from monocrystalline 3C-silicon carbide is removed up to the layer is released from the monocrystalline 3C-silicon carbide. The layer of monocrystalline gallium nitride has a thickness of 10 mu m to 1 mm. The substrate of monocrystalline silicon is removed through splitting along the layer of monocrystalline 3C-silicon carbide. The layer of monocrystalline 3C-silicon carbide is removed after removing the substrate from monocrystalline silicon.Patents:
DE 102,009,055,667
Inventor(s): MURPHY BRIAN [DE]; SCHOLZ FERDINAND [DE]
Type of Offer: Sale
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