Polycrystalline silicon thin layers produced by titanium-supported metal-induced layer exchange

The method involves applying a layer sequence on a substrate, where the layer sequence has an oxidation layer arranged between an output layer and an activator layer. The layer sequence is treated with heat for forming a polycrystalline end layer, and the stable oxidation layer is produced by oxidation of transition metals during heat treatment. The oxidation layer is made of titanium oxide, the activator layer is made of silver and the output material is made of semiconductor material such as silicon and germanium. An independent claim is also included for a device for converting radiations into electric energy.

Patents:
EP 2,133,907

Inventor(s): STUTZMANN MARTIN [DE]; LECHNER ROBERT [DE]; SCHOLZ MICHAEL [DE]

Type of Offer: Sale



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