Integrable Sub-Micron Ferromagnets for High Density Storage

DESCRIPTION: The continued evolution of magnetic media's vital role in information storage requires advances in appropriate technologies. Scientists at the University of California have developed a process of introducing sub-micron ferromagnets of selectable size and spacings into semiconductor structures (including both Si and III-V compound semiconductors) by means of ion implantation and subsequent heat treatments. The properties of this invention offer alternate technologies for the next generation of information storage. The technology lends itself to high areal densities, is optically active, and is integrable with other semiconductor electronics. The compatibility with semiconductor processing methods offers unprecedented possibilities for magnetic storage.

APPLICATIONS: This invention has many potential device applications including magneto-resistive recording read heads/sensors, magneto-optical memory media, non-volatile magnetic memory, and single domain heads for high resolution magnetic force microscopy. It also offers the potential for integrating current disk and memory storage into a single medium.

ADVANTAGES:

* uses standard ion implantation techniques and simple heat treatments
* economical; requires less processing than current technologies
* high density of information storage
* optically active
* highly integrable with other semiconductor quantum electronics

REFERENCE: 1995-255

Patents:
US 6,307,241   [MORE INFO]

Type of Offer: Licensing



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