Low-temperature Pulsed Dc Reactive Sputtering Deposition of Thin Films from Metal Targets

This invention discloses a method for depositing ZnO films or other metal oxide films by a reactive pulse DC sputtering from metal target in a gas mixture containing oxygen. The substrate can be set at any temperature from above room temperature (20 DEG C), while the resulted ZnO films are transparent.

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Patents:
WO 2,010,051,282

Inventor(s): FAN QI HUA [US]; ZHANG SHIBIN [US]; DENG XUNMING [US]

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