Pattern Transferring By Direct Current Plasma Based Ion Implantation and Deposition

A method and apparatus is disclosed for pattern transferring by direct current plasma based ion implantation and deposition. The apparatus comprising: a vacuum chamber divided into a first part and a second part; the first part and a second part have a connecting aperture; a means for producing a plasma of charged ions in the first part; a multi-perforated grid proximal to the aperture for limiting expansion of the ion sheath beyond the grid; an ion target; a means for biasing the ions toward the target for providing a controlled trajectory therebetween; and a pattern mask within the ion trajectory for transferring the pattern to the target.

Attached files:


Patents:
WO 2,009,006,679

Inventor(s): KWOK DIXON T K [AU]; SUTHERLAND DUNCAN A [AU]; KONDYURINA IRINA [AU]; CHAIWONG CHANOKPORN [AU]

Type of Offer: Sale



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