Determining Active Doping Profiles in Semiconductor Structures

An optical measurement method and system is disclosed to determine an active doping profile of a semiconductor substrate, the method comprising directing at least one pump laser pulse of a pump laser beam on the semiconductor substrate, with at least one pump laser pulse having a pump laser pulse power generating an amount of excess carrier concentration in the semiconductor substrate which is at least comparable to the peak concentration of the active doping profile; directing a probe laser beam on the semiconductor substrate such that the probe laser beam is at least partially reflected by the generated amount of excess carrier concentration; measuring a reflection signal of the probe laser beam, the reflection signal being induced by the generated amount of excess carrier concentration, as a function of a predetermined parameter and determining at least part of the active doping profile from the reflection signal as function of the predetermined parameter.

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Patents:
WO 2,010,115,994

Inventor(s): DORTU FABIAN [BE]

Type of Offer: Sale



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