The photonic mixer for use in time of flight (TOF) applications comprises substrate 1 having a field area that is doped with a dopant of a first conductivity type; a couple of an injecting contact region 3 for injecting the majority carrier-current into the semiconductor substrate 1 and a detector region 7 for collecting the photocurrent, whereby the injecting contact region 3 is doped with a dopant of the first conductivity type at a higher dopant concentration than the semiconductor substrate 1 and where the detector region 7 is doped with a dopant of a second conductivity type opposite the first conductivity type such that it forms a junction with the semiconductor substrate 1, a zone of the semiconductor substrate around said junction being a depleted substrate zone 11; and a field shaping zone 13 of the first conductivity type defining a lateral edge of the couple and having a dopant concentration between the dopant concentrations of the semiconductor substrate 1 and the injecting contact region 3, the field shaping zone 13 is designed to limit said depleted substrate zone 11 laterally. The detector region 7 may also take the form of a continuous ring containing the injection region 3, in this case the field shaping zone 13 tracks laterally with the detector region 7. The field shaping zone 13 may also be omitted in favour of the case where the substrate 1 comprises an active layer with the injection 3 and detection 7 regions on one face and a current collection contact on the other.
TEMPEL WARD VAN DER [BE]; NIEUWENHOVE DANIOL VAN [BE]; KUIJK MAARTEN [BE]
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