Method for Improvement of Semiconductor Crystalline Lattice
The invention applies to field of technical physics, and it can be used in electronics and optoelectronics. In invention it is shown that there is a possibility to improve semiconductor crystalline lattice. High gradient of temperature has the main role in this process, and interstitial atoms and vacancies, as a result, drift in opposite directions: vacancies into semiconductor bulk, but interstitial atoms to the surface.
MEDVIDS ARTURS [LV]; MICKO ALEKSANDRS [LV]; ONUFRIJEVS PAVELS [LV]; GNATYUK VOLODYMYR [UA]; KUOKSTIS EDMUNDAS [LT]
Type of Offer:
« More Electronics Patents