Method for Improvement of Semiconductor Crystalline Lattice

The invention applies to field of technical physics, and it can be used in electronics and optoelectronics. In invention it is shown that there is a possibility to improve semiconductor crystalline lattice. High gradient of temperature has the main role in this process, and interstitial atoms and vacancies, as a result, drift in opposite directions: vacancies into semiconductor bulk, but interstitial atoms to the surface.

Patents:
LV 14,250

Inventor(s): MEDVIDS ARTURS [LV]; MICKO ALEKSANDRS [LV]; ONUFRIJEVS PAVELS [LV]; GNATYUK VOLODYMYR [UA]; KUOKSTIS EDMUNDAS [LT]

Type of Offer: Sale



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