Ferroelectric Devices Including a Layer Having Two Or More Stable Configurations

Ferroelectric semiconductor devices are provided by including a ferroelectric layer in the device that is made of a material that is not ferroelectric in bulk. Such layers can be disposed at interfaces to promote ferroelectric switching in a semiconductor device. Switching of conduction in the semiconductor is effected by the polarization of a mechanically bi-stable material. This material is not ferroelectric in bulk but can be considered to be when the thickness is sufficiently reduced down to a few atomic layers. Devices including such ferroelectric layers are suitable for various applications, such as transistors and memory cells (both volatile and non-volatile).

Patents:
WO 2,011,043,794

Inventor(s): KOLPAK ALEXIE M [US]; WALKER FRED J [US]; REINER JAMES W [US]; AHN CHARLES H [US]; ISMAIL-BEIGI SOHRAB [US]

Type of Offer: Sale



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