Improved Complementary Metal Oxide Semiconductor Devices

Improvements in Complementary Metal Oxide Semiconductor (CMOS) devices; in particular, field effect transistors (FETs) and devices using said transistors which are able to take advantage of the higher carrier mobility of electrons compared to holes by replacing the conventional p-channel transistor with an n-channel transistor having a double gate (or vice versa) : Such a. Unipolar CMOS (U-CMOS) transistor can be realised by adapting the source and/or the drain such that when the body region undergoes inversion at a first surface current, is able to flow between the drain and the source and when the body region undergoes inversion at a second surface current is not able to flow between the drain and the source. Various logic gates may be constructed using U-CMOS transistors.

Attached files:


Patents:
WO 2,010,007,478

Inventor(s): MA TSO-PING [US]; LEE MINJOO [US]; SUN XIAO [US]

Type of Offer: Sale



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