Field Effect Transistor with Shifted Gate

A field effect transistor has a shifted gate such that the gate-source distance depends on the ratio of the threshold voltage to the drain voltage. In one embodiment, a switch may include two FETs: one FET in a series configuration and one FET in a shunt configuration. Providing a switch having at least one FET with a shifted gate allows increasing switching speed and decreasing insertion loss.

Attached files:


Patents:
US 20,100,039,164

Inventor(s): MIL SHTEIN SAMSON [US]; LIESSNER CHRISTOPHER [US]

Type of Offer: Sale



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