Field Effect Transistor with Independently Biased Gates

A field effect transistor (FET) having at least two independently biased gates can provide uniform electric field in the channel region of the FET. The same AC voltage may be applied to each gate for modulating the FET. One of the gates is positioned closer to the channel region than the other gate. Such a FET allows tailoring the electric field in the channel region of the FET so that it is substantially uniform. The FET exhibits desirable performance characteristics, including having a constant transconductance.

Attached files:


Patents:
US 20,100,109,050

Inventor(s): MIL SHTEIN SAMSON [US]; PALMA JOHN F [US]

Type of Offer: Sale



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