Bipolar Transistor with Quantum Well Base and Quantum Well Emitter

A double heterojunction bipolar transistor (DHBT) is disclosed having a quantum well base and a quantum well emitter. The energy band profile of a DHBT can be used t create a quantum well for holes and a quantum barrier for electrons.

Attached files:
WO 2010117467.jpg

Patents:
WO 2,010,117,467

Inventor(s): MIL SHTEIN SAMSON [US]; CHURI AMEY V [US]; ERSLAND PETER N [US]; RIZZI BRIAN J [US]

Type of Offer: Sale



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