Bipolar Transistor with Quantum Well Base and Quantum Well Emitter
A double heterojunction bipolar transistor (DHBT) is disclosed having a quantum well base and a quantum well emitter. The energy band profile of a DHBT can be used t create a quantum well for holes and a quantum barrier for electrons.
Attached files:Patents:WO 2,010,117,467
Inventor(s):
MIL SHTEIN SAMSON [US]; CHURI AMEY V [US]; ERSLAND PETER N [US]; RIZZI BRIAN J [US]
Type of Offer:
Sale
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