Hybrid Dielectric Material for Thin Film Transistors

Thin-film transistors are made using a hybrid silica-silicone material as an insulating material. The hybrid silica-silicone material may be deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer. The transistors may be made in any conventional TFT geometry.

Attached files:
US 20110068332.jpg

Patents:
US 20,110,068,332

Inventor(s): HAN LIN [US]; MANDLIK PRASHANT [US]; WAGNER SIGURD [US]

Type of Offer: Licensing

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