Measuring Method and Device for Characterizing a Semiconductor Component
The invention relates to a measuring method for characterizing a semiconductor component (1) having at least one pn junction and a measuring surface, which is the front and/or rear of the semiconductor component and which has at least one contacting subarea, which is covered by a metallization or is intended for coverage by a metallization, comprising the following steps: A. Planar application of electromagnetic excitation radiation onto the measuring area of the semiconductor component (1) for separating charge carrier pairs in the semiconductor component (1) and B. spatially resolved measurement of electromagnetic radiation originating from the semiconductor component (1) using at least one detection unit.; It is essential that in at least one step A, at least one predetermined excitation subarea of the measuring surface has an intensity of the excitation radiation which is predetermined for this excitation subarea applied thereto and at least one sink subarea of the measuring surface has an intensity of the excitation radiation which is less than the excitation subarea applied thereto, wherein the excitation and sink subareas are disposed on opposite sides of said contacting subarea and adjoin it and/or entirely or partially overlap it. Furthermore, the invention relates to a measuring device for performing such a method.
CARSTENSEN JUERGEN [DE]; SCHUETT ANDREAS [DE]; FOELL HELMUT [DE]; WARTA WILHELM [DE]; KASEMANN MARTIN [DE]
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