Method for Fabrication of a Semiconductor Element and Structure Thereof

Re-programmable antifuses and structures utilizing re-programmable antifuses are presented herein. Such structures include a configurable interconnect circuit having at least one re-programmable antifuse, wherein the at least one re-programmable antifuse is configured to be programmed to conduct by applying a first voltage across it and is configured to be re-programmed not to conduct by applying second voltage across it, wherein the second voltage is higher than the first voltage. Additionally, the re-programmable antifuses may be configured to a permanently conductive state by applying an even higher voltage across it.

Attached files:


Patents:
US 20,100,289,524

Inventor(s): OR-BACH ZVI [US]; TOUR JAMES M [US]; YAO JUN [US]; CRONQUIST BRIAN [US]

Type of Offer: Licensing



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