Transparent Rectifying Metal/metal Oxide/semiconductor Contact Structure and Method for the Production Thereof and Use
The invention relates to transparent rectifying contact structures for application in electronic devices, in particular appertaining to optoelectronics, solar technology and sensor technology, and also a method for the production thereof. The transparent rectifying contact structure according to the invention has the following constituents: a) a transparent semiconductor, b) a transparent, non-insulating and non-conducting layer composed of metal oxide, metal sulphide and/or metal nitride, the resistivity of which is preferably in the range of 102 Ocm to 107 Ocm and c) a layer composed of a transparent electrical conductor wherein the layer b) is formed between the semiconductor a) and the layer c) and the composition of the layer b) is defined in greater detail in the description of the patent.
GRUNDMANN MARIUS [DE]; FRENZEL HEIKO [DE]; LAJN ALEXANDER [DE]; VON WENCKSTERN HOLGER [DE]
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