Space-Charge-Free Semiconductor and Method

A semiconductor having a an n-type material and a p-type material, wherein the n-type material and p-type material are joined to form a space-charge-free p-n junction. The energy of the Fermi-level of the n-type material is equal to the energy of the Fermi-level of the p-type material. This allows for the pre-alignment of the Fermi-levels of the n-type and the p-type materials. The semiconductor has minimal or no g-r noise. The semiconductor can be operated at TBLIP in the range of about 220 DEG to about 240 DEG K.

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Patents:
US 20,090,065,803

Inventor(s): WICKS GARY [US]

Type of Offer: Licensing



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