Methods and compositions for preparing tensile strained Ge on Ge1-ySny buffered semiconductor substrates
The present disclosure describes methods for preparing semiconductor structures, comprising forming a Ge1-ySny buffer layer on a semiconductor substrate and forming a tensile strained Ge layer on the Ge1-ySny buffer layer using an admixture of (GeH3)2CH2 and Ge2H6 in a ratio of between 1:10 and 1:30. The disclosure further provides semiconductor structures having highly strained Ge epilayers (e.g., between about 0.15% and 0.45%) as well as compositions comprising an admixture of (GeH3)2CH2 and Ge2H6 in a ratio of between about 1:10 and 1:30. The methods herein provide, and the semiconductor structure provide, Ge epilayers having high strain levels which can be useful in semiconductor devices for example, in optical fiber communications devices.
KOUVETAKIS JOHN [US]; FANG YAN-YAN [US]
Type of Offer:
« More Electronics Patents