Method of Providing a Semiconductor Device with a Dielectric Layer and Semiconductor Device Thereof

In some embodiments, a method of providing a semiconductor device can include: (a) providing a substrate; (b) depositing a first metal layer over the substrate; (c) spin-coating a first dielectric material over the first metal layer, where the first dielectric material includes an organic siloxane -based dielectric material; and (d) depositing a second dielectric material comprising silicon nitride over the first dielectric material. Other embodiments are disclosed in this application.

Patents:
WO 2,010,065,457

Inventor(s): MARRS MICHAEL [US]; DAILEY JEFFREY [US]

Type of Offer: Licensing



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