Method of Etching Organosiloxane Dielectric Material and Semiconductor Device Thereof

In some embodiments, a method of etching an organosiloxane dielectric material can include: (a) providing the organosiloxane dielectric material; (b) providing a patterned mask over the organosiloxane dielectric material; and (c) reactive ion etching the organosiloxane dielectric material. Other embodiments are disclosed in this application.

Patents:
WO 2,010,065,459

Inventor(s): MARRS MICHAEL [US]

Type of Offer: Licensing



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