GeSn Infrared Photodetectors

Photodiode devices with GeSn active layers can be integrated directly on p+ Si platforms under CMOS-compatible conditions. It has been found that even minor amounts of Sn incorporation (2 %) dramatically expand the range of IR detection up to at least 1750 nm and substantially increases the absorption. The corresponding photoresponse can cover of all telecommunication bands using entirely group IV materials.

Attached files:


Patents:
WO 2,010,033,641   [MORE INFO]

Inventor(s): KOUVETAKIS JOHN [US]; MENENDEZ JOSE [US]; ROUCKA RADEK [US]; MATTHEWS JAY [US]

Type of Offer: Licensing



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