Methods for Improving the Quality of Group III-nitride Materials and Structures Produced By the Methods
The invention provides methods which can be applied during the epitaxial growth of two or more layers of Group Ill-nitride semiconductor materials so that the qualities of successive layer are successively improved. In preferred embodiments, surface defects interact with a protective layer of a protective material to form amorphous complex regions capable of preventing the further propagation of defects and dislocations. The invention also includes semiconductor structures fabricated by these methods.
WO 2,009,139,793 [MORE INFO
ARENA CHANTAL [US]; MAHAJAN SUBHASH [US]
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