Lattice Matched Multi- Junction Photovoltaic and Optoelectronic Devices

The present invention provides semiconductor structures comprising a substrate and at least three III-V and/or II- VI multi-junction building blocks, each comprising a p-n junction having at least two alloy layers, formed over the substrate, provided at least one multi-junction building block comprises II-VI alloy layers. Further described are methods for preparing semiconductor structures utilizing a sacrificial or etch-stop ternary III-V alloy layer over an III-V substrate.

Attached files:
WO 2009067347.jpg

Patents:
WO 2,009,067,347

Inventor(s): ZHANG YONG-HANG [US]; JOHNSON SHANE R [US]; YU SHUI-QING [US]; DING DING [US]

Type of Offer: Licensing



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