Terahertz Emitter with High Power and Temperature Operation
Terahertz emitting devices are disclosed. The terahertz emitting device comprises a wafer and a current source. The wafer includes silicon carbide and a dopant. In particular, the wafer may consist of 6H silicon carbide; a nitrogen dopant having a concentration of approximately 1018 cm-3; a boron dopant having a concentration of approximately 1016 cm-3; and an aluminum dopant having a concentration of approximately 1015 cm-3. The current source is electrically coupled to the wafer. The wafer emits radiation having a frequency between approximately 1 THz and 20 THz when driven by the current source.
KOLODZEY JAMES [US]; COPPINGER MATTHEW [US]; XUAN GUANGCHI [US]; LV PENGCHENG [US]
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