I-III-VI2 Photovoltaic Absorber Layers

The invention provides a film having a composition AgWCu1-WInrGaxKySe2(I-Z)Q2Z; wherein K is Al or Tl or a combination of these; Q is S or Te or a combination of these; w is in a range from 0.01 to 0.75; x is in a range from 0.1 to 0.8; and r, y and z are each independently in a range from 0 to 1, provided that r+x+y= l. Methods of making the film can include processing temperatures not exceeding 500 DEG C.

Attached files:


Patents:
WO 2,009,046,178   [MORE INFO]

Inventor(s): HANKET GREGORY M [US]; SHAFARMAN WILLIAM N [US]

Type of Offer: Sale



« More Electronics Patents

---