Photosensitive Semiconductor Component

In a semiconductor device (1) with a photosensitive doped semiconductor layer (2), are released into the at absorption of electromagnetic radiation (6) electrical charge carriers, the photosensitive semiconductor layer (2) a structured interface (7).The structured interface (7) is at least one layer (3) downstream of which generates an electric field to separate the charge carriers released, whereby the electric field of the structured interface (7) extends. The photosensitive semiconductor device (1) is characterized by a high efficiency of charge separation, especially for generating an electrical current from.

Patents:
EP 2,160,767

Inventor(s): FUECHSEL KEVIN [DE]; TUENNERMANN ANDREAS [DE]; KLEY ERNST-BERNHARD [DE]

Type of Offer: Sale



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