Semiconductor Heterostructure Nanowire Devices

Nanowire devices comprising core-shell or segmented nanowires are provided. In these nanowire devices, strain can be used as a tool to form metallic portions in nanowires made from compound semiconductor materials, and/or to create nanowires in which embedded quantum dots experience negative hydrostatic pressure or high positive hydrostatic pressure, whereby a phase transitions may occur, and/or to create exciton crystals.

Attached files:


Patents:
US 20,090,289,244

Inventor(s): PRYOR CRAIG [US]; PISTOL MATS-ERIK [SE]

Type of Offer: Licensing



« More Nanotech Patents
« More Electronics Patents

---