Method of Fabricating a Planar Semiconductor Nanowire

A composition comprises a semiconductor substrate having a crystallographic plane oriented parallel to a surface of the substrate and at least one planar semiconductor nanowire epitaxially disposed on the substrate, where the nanowire is aligned along a crystallographic direction of the substrate parallel to the crystallographic plane. To fabricate a planar semiconductor nanowire, at least one nanoparticle is provided on a semiconductor substrate having a crystallographic plane oriented parallel to a surface of the substrate. The semiconductor substrate is heated within a first temperature window in a processing unit. Semiconductor precursors are added to the processing unit, and a planar semiconductor nanowire is grown from the nanoparticle on the substrate within a second temperature window.; The planar semiconductor nanowire grows in a crystallographic direction of the substrate parallel to the crystallographic plane.

Attached files:
WO 2009134687.jpg

Patents:
WO 2,009,134,687

Inventor(s): LI XIULING [US]; FORTUNA SETH A [US]

Type of Offer: Licensing



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