PNP light emitting transistor and method
A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an emitter contact coupled with the second tunnel junction, and a base contact coupled with the base; whereby, signals applied with respect to the collector, base, and emitter contacts causes light emission from the base by radiative recombination in the base.
WALTER GABRIEL [US]; HOLONYAK JR NICK [US]; FENG MILTON [US]; CHAN RICHARD [US]
Type of Offer:
« More Electronics Patents