PNP light emitting transistor and method

A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an emitter contact coupled with the second tunnel junction, and a base contact coupled with the base; whereby, signals applied with respect to the collector, base, and emitter contacts causes light emission from the base by radiative recombination in the base.

Attached files:


Patents:
US 20,090,115,346

Inventor(s): WALTER GABRIEL [US]; HOLONYAK JR NICK [US]; FENG MILTON [US]; CHAN RICHARD [US]

Type of Offer: Licensing



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