Transparent Nanowire Transistors and Methods for Fabricating Same
Disclosed are fully transparent nanowire transistors having high field-effect mobilities. The fully transparent nanowire transistors disclosed herein include one or more nanowires, a gate dielectric prepared from a transparent inorganic or organic material, and transparent source, drain, and gate contacts fabricated on a transparent substrate. The fully transparent nanowire transistors disclosed herein also can be mechanically flexible.
MARKS TOBIN J [US]; JANES DAVID B [US]; JU SANGHYUN [US]; YE PEIDE [US]; ZHOU CHONGWU [US]; FACCHETTI ANTONIO [US]
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