Examples of the present invention include a metamaterial comprising a plurality of resonators disposed on a substrate, the substrate comprising a dielectric support layer and a relatively thin semiconductor layer, having a Schottky junction between at least one conducting resonator and the semiconductor layer. The properties of the resonator may be adjusted by modifying the physical extent of a depletion region associated with the Schottky junction.
NGUYEN VINH N [US]; JOKERST NAN MARIE [US]; SMITH DAVID R [US]; TYLER II TALMAGE [US]; KIM JUNGSANG [US]; YONAK SERDAR H [US]
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