Semiconductor device and method for manufacturing a semiconductor device
The invention concerns a semiconductor device (1) comprising a structure, wherein the structure comprising a substrate (8), a first layer (2) onto the substrate comprising GaN and a second layer (3) comprising AlGaN. The second layer is deposited onto the first layer and the first and the second layer cover at least partially the substrate, and wherein the structure comprises a third layer (4) comprising diamond.
DIPALO MICHELE [DE]; KOHN ERHARD [DE]
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