Use of Separate ZnTe Interface Layers to Form OHMIC Contacts to p-CdTe Films

A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising:depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance;depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; anddepositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.

US 5,909,632   [MORE INFO]

Inventor(s): Timothy A. Gessert

Type of Offer: Licensing

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