Method and apparatus for forming conformal SiN.sub.x films
A silicon nitride film formation method includes: heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.
Patents:US 7,300,890 [
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Inventor(s):
Qi Wang
Type of Offer:
Licensing
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