Method and apparatus for forming conformal SiN.sub.x films

A silicon nitride film formation method includes: heating a substrate to be subjected to film formation to a substrate temperature; heating a wire to a wire temperature; supplying silane, ammonia, and hydrogen gases to the heating member; and forming a silicon nitride film on the substrate.

US 7,300,890   [MORE INFO]

Inventor(s): Qi Wang

Type of Offer: Licensing

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