Rapid Low-Temperature Epitaxial Growth Using a Hot-Element Assisted Chemical Vapor Deposition Process
The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.
Patents:US 6,251,183 [
MORE INFO]
Inventor(s):
Kim M. Jones; Archie H. Mahan; Brent P. Nelson; Richard S. Crandall; Eugene Iwancizko
Type of Offer:
Licensing
« More Science Patents« More Solar Patents