Rapid Low-Temperature Epitaxial Growth Using a Hot-Element Assisted Chemical Vapor Deposition Process

The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

US 6,251,183   [MORE INFO]

Inventor(s): Kim M. Jones; Archie H. Mahan; Brent P. Nelson; Richard S. Crandall; Eugene Iwancizko

Type of Offer: Licensing

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