Optical Method for Determining the Doping Depth Profile in Silicon U.S. Patent 7,179,665
A method of processing a sample, comprising the steps of: introducing dopant into a sample thereby producing a doped sample; producing a healed sampled including a doping density profile in response to introducing the dopant into the sample; and measuring the doping density profile of the healed sample by performing reflectometry using light generated within the visible wavelength spectrum.
US 7,179,665 [MORE INFO
Dean H. Levi
Type of Offer:
« More Solar Patents