Optical Method for Determining the Doping Depth Profile in Silicon U.S. Patent 7,179,665

A method of processing a sample, comprising the steps of: introducing dopant into a sample thereby producing a doped sample; producing a healed sampled including a doping density profile in response to introducing the dopant into the sample; and measuring the doping density profile of the healed sample by performing reflectometry using light generated within the visible wavelength spectrum.

US 7,179,665   [MORE INFO]

Inventor(s): Dean H. Levi

Type of Offer: Licensing

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