Copper Metallization Structure and Method of Construction
This novel invention addresses the need for fast, reliable, performance-oriented interconnects and vias in today's and tomorrow's smaller, faster circuit systems. Specifically, it is a process for producing an interconnect layer of continuous copper, with excellent step coverage and superior adhesion characteristics. An interconnect system made of copper, as compared to aluminum which is widely used today in the semiconductor industry, has electromigration effects and, therefore, can carry a higher maximum current density and allow faster transport of electrons. The process of the invention requires a minimal number of steps and does not need a seed layer, thus reducing production costs and drastically lowering contamination rates. While principally directed towards metallizing silicon-based integrated circuits, the invention may also be applicable to other integrated circuits and layered structures.
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