A Novel Method for Fabricating Ultrahigh Density MRAM

The Johns Hopkins University seeks a partner to commercialize a new technique for fabricating Magnetoresistive Random Access Memory (MRAM). The fabrication method creates asymmetric ferromagnetic nanorings, a novel nanotechnology with unique properties. The nanorings form the basis for MRAM chips thousands of times more powerful than any other MRAM technology commercially available. Description (Set) • Each nanoring is highly stable, with a definite spin controlled by the direction of the magnetic field. The nanorings can store binary information through its spin.
• By utilizing the magnetic field to control the binary value of each ring, MRAM chips using asymmetric nanorings will consume 10 times less power than current DRAM chips.
• The nanoring�s magnetic field is confined within the ring, which eliminates all stray field disruptions. Stray field disruptions (which cause data loss) have been the biggest technical hurdle preventing the successful miniaturization of MRAM.
• Without the worry of stray field disruptions causing data loss, a density of 100 billion nanorings per square inch can be fabricated.
• Each nanoring holds one bit of data, which translates into a density of over 3 gigabytes per square inch, achieving a density over 3,000 times greater than any MRAM chip available on the market today.
• Asymmetric nanorings form the basis of MRAM chips that consume 10 times less power than DRAM chips and hold 3,000 times more information than MRAM chips. Proposed Use (Set) Magnetoresistive Random Access Memory (MRAM)

Inventor(s): Zhu, Frank Qing

Type of Offer: Licensing

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