Method for Low-Temperature Deposition of Boron Carbo-Nitride as a Barrier and Etch Stop for Copper Interconnect Manufacturing
Invention Description A method of forming boron carbo-nitride layer for use as a barrier and etch stop layer in copper interconnect structures used in integrated circuit manufacturing has been developed. The boron carbo-nitride films are deposited by a thermal chemical vapor deposition (CVD) process at temperatures below 450° Celsius to minimize thermal exposure of substrate. The films are deposited conformally on interconnect structures and offer desirable electrical properties with a dielectric constant less than 4.
This invention solves the problem of reducing the capacitance associated with interconnect insulating films by offering a lower dielectric constant material and eliminating substrate damage associated with plasma-enhanced CVD technologies.
Films with dielectric constant less than 4 can be deposited using thermal CVD at low temperatures (less than 450°C), whereas the state-of-the-art uses plasma enhanced CVD. A thermal CVD route offers the opportunity for more conformally deposited films and does not cause substrate damage that is associated with a plasma enhanced process.
IP Status One U.S. patent issued: 7,144,803
UT Researcher Yangming Sun, Ph.D., Chemistry and Biochemistry, The University of Texas at Austin John G. Ekerdt, Ph.D., Chemical Engineering, The University of Texas at Austin Kurt H. Junker, APRDL, Motorola, Inc. Edward R. Engbrecht, Ph.D., Chemical Engineering, The University of Texas at Austin
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