Deposition of Device Quality Low H Content, Amorphous Silicon Films

U.S. Patent 5,397,737

Technology Description A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, C., tungsten (W) filament in the proximity of a high temperature, C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite this lowered hydrogen content.

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See the full U.S. Patent for this technology. NREL is looking for an organization to develop and commercialize this innovative technology. Interested organizations may consider developing/commercializing this technology through a license agreement, Cooperative Research Agreement, or Work for Others agreement. Please contact Richard Bolin at (303) 275-3028 for licensing, CRADA, and Work for Others opportunities.

Type of Offer: Licensing

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