Dry Texturing of Solar Cells

U.S. Patent 5,358,574

Technology Description A textured backside of a semiconductor device for increasing light scattering and absorption in a semiconductor substrate is accomplished by applying infrared radiation to the front side of a semiconductor substrate that has a metal layer deposited on its backside in a time-energy profile that first produces pits in the backside surface and then produces a thin, highly reflective, low resistivity, epitaxial alloy layer over the entire area of the interface between the semiconductor substrate and a metal contact layer. The time-energy profile includes ramping up to a first energy level and holding for a period of time to create the desired pit size and density and then rapidly increasing the energy to a second level in which the entire interface area is melted and alloyed quickly. After holding the second energy level for a sufficient time to develop the thin alloy layer over the entire interface area, the energy is ramped down to allow epitaxial crystal growth in the alloy layer. The result is a textured backside an optically reflective, low resistivity alloy interface between the semiconductor substrate and the metal electrical contact layer.

Interested in this Technology?
See the full U.S. Patent for this technology. NREL is looking for an organization to develop and commercialize this innovative technology. Interested organizations may consider developing/commercializing this technology through a license agreement, Cooperative Research Agreement, or Work for Others agreement. Please contact Richard Bolin at

Type of Offer: Licensing

Next Patent »
« More Solar Patents

Share on      

CrowdSell Your Patent