Plasma and Reactive Ion Etchning to Prepare OHMIC Contacts
U.S. Patent 6,458,254
Technology Description A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising:a) placing a CdS/CdTe layer into a chamber and evacuating said chamber;b) backfilling the chamber with Argon or a reactive gas to a pressure sufficient for plasma ignition; andc) generating plasma ignition by energizing a cathode which is connected to a power supply to enable the plasma to interact argon ions alone or in the presence of a radio-frequency DC self-bias voltage with the p-CdTe surface.
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