Plasma and Reactive Ion Etchning to Prepare OHMIC Contacts

U.S. Patent 6,458,254


Technology Description A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising:a) placing a CdS/CdTe layer into a chamber and evacuating said chamber;b) backfilling the chamber with Argon or a reactive gas to a pressure sufficient for plasma ignition; andc) generating plasma ignition by energizing a cathode which is connected to a power supply to enable the plasma to interact argon ions alone or in the presence of a radio-frequency DC self-bias voltage with the p-CdTe surface.

Interested in this Technology?
See the full U.S. Patent for this technology. NREL is looking for an organization to develop and commercialize this innovative technology. Interested organizations may consider developing/commercializing this technology through a license agreement, Cooperative Research Agreement, or Work for Others agreement. Please contact Richard Bolin at (303) 275-3028 for licensing, CRADA, and Work for Others opportunities.

Type of Offer: Licensing



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