Rapid Low-Temperature Epitaxial Growth Using a Hot-Element Assisted Chemical Vapor Deposition Process

U.S. Patent 6,251,183

Technology Description The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

Interested in this Technology?
See the full U.S. Patent for this technology. NREL is looking for an organization to develop and commercialize this innovative technology. Interested organizations may consider developing/commercializing this technology through a license agreement, Cooperative Research Agreement, or Work for Others agreement. Please contact Richard Bolin at (303) 275-3028 for licensing, CRADA, and Work for Others opportunities.

Type of Offer: Licensing

Next Patent »
« More Solar Patents

Share on      

CrowdSell Your Patent