Rapid Low-Temperature Epitaxial Growth Using a Hot-Element Assisted Chemical Vapor Deposition Process
U.S. Patent 6,251,183
Technology Description The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.
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