Large Area Vacuum Ultra-Violet Sensors (GSC-14777)

This is, to the best of our knowledge, a first time report of Pt/n-type GaN Schottky diodes with very large active areas, up to 1cm x 1cm, which exhibit extremely low leakage current at low reverse biases. Very large area Pt/n-GaN Schottky diodes of size 0.25cm2 and 1cm2 have been fabricated from n-/n+ GaN epitaxial layers grown by low pressure metalorganic vapour phase epitaxy on single crystal c-plane sapphire, which showed a leakage current of 14pA and 2.7nA respectively at 0.5V reverse bias. These diodeshave shown to be sensitive vacuum ultra-violet sensors operating at wavelengths below 200nm.

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