Improvements to the Quasi-1D SCM AC to Dopant Density Conversion Algorithm and a New Quasi-3D SCM AC Bias to Dopant Density Conversion Algorithm
State of the art integrated circuit technology demonstrates that it is possible to create active and passive electrical and electronic components on a semi-conductive substrate at the sub-micron level. This ability requires accurate knowledge of the spatial extent of dopant impurities that are incorporated into the semi-conductive substrate. This knowledge is necessary because of the scale at which the concentration, and thus variation or profile of the dopants is operating. Essentially, in order to achieve predictability in active and passive component behavior, it is necessary to be able to accurately measure the dopant density profiles which can then be used by design engineers in design and manufacturing processes. This invention relates to a novel method for improving spatial resolution and accuracy of dopant density profiling of materials used in semiconductors when conducting microscopy. The algorithms developed are used to convert the scanning capacitance microscopy data to dopant densities.
This technology has applications in the semiconductor industry
*In 2-dimensional dopant profiling of semi-conductors
*In 2-dimensional carrier profiling of semi-conductors
Stage of Development
A patent (US 6,210,982) has been issued by US Patent and Trademark office. This technology is part of an active and ongoing research program and is available for developmental research support/licensing under either exclusive or non-exclusive terms.
*V.V. Zavyalov, J.S. McMurray, S.D. Stirling, C.C. Williams and H. Smith, �2D dopant and carrier profiles obtained by Scanning Capacitance Microscopy on an actively biased cross-sectioned MOSFET device,� J. Vac. Sci. Tech. B 18, 549 (2000).
Jeffrey McMurray, Clayton Williams
Type of Offer:
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