Heteroepitaxial Layer and Method for the Production Thereof

The invention relates to a growth substrate for producing non-adamantine epitaxial layers with a substrate (2) made of monocrystalline silicon, at least one epitaxial, preferably oxidic buffer layer which is disposed on the substrate, and at least one metal layer (4) that is arranged on the buffer layer and contains or is composed of a transition metal from the fourth, fifth, and/or sixth period, said transition metal having a melting point of 1200 K or more.

Patents:
DE 10,352,655

Inventor(s): SCHRECK MATTHIAS [DE]; GSELL STEFAN [DE]; BAUER THOMAS [DE]; GOLFUSS JOHANNES [DE]; STRITZKER BERND [DE]

Type of Offer: Sale



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