Very high permittivity dielectric component used at high frequencies
The composition is expressed by La ( 2 - X )Sr XNiO 4, in which X lies in the range 0 to 0.5 and the relative permittivity epsilon ris no less than 8000 above 10 MHz. Alternatively or in addition, X lies in the range 0 to 0.3 and the relative permittivity epsilon ris no less than 15000. Further variant relative permittivites are quoted, up to 25000. High values of relative permittivity are quoted for frequencies ranging from 10 MHz up to 3 GHz. Values of x are specified in the range 0.05 to 0.3. The component is a lanthanum strontium nickel oxide (LSNO) crystal, especially a single- or poly-crystal. The composition forms a layer manufactured by deposition, especially an amorphous, polycrystalline or microcrystalline layer. The deposition substrate is a semiconductor, wafer, metal or metal foil. An electronic component includes the composition and structure described. It is an active or passive semiconductor component, especially a capacitative element, an element of memory, a rechargeable battery or cell, an energy storage unit, a capacitor or a diode.
KROHNS STEPHAN [DE]; LUNKENHEIMER PETER [DE]; LOIDL ALOIS [DE]; PRONIN ARTEM [DE]
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