Plasma Reactor, and Method for the Production of Monocrystalline Diamond Layer

The Erfindujng concerns a plasma reactor, with which wide single crystalline diamond layers on wafers can be manufactured. The invention relates to in addition a method to the preparation of such diamond layers.

For the preparation of wide diamond layers provides the hetero epitaxy, D. h. the deposition on single crystalline foreign substrates the usually-promising concept. Here first in an epitaxial Nukleation (epitaxial nucleation) diamond germs deposited and the subsequent diamond layer are grown up. In order to be able to manufacture actual single crystalline diamond layers, the control of the epitaxial Nukleation is decisive.

To the deposition of diamond on silicon or silicon carbide is Nukleationsverfahren for some time known. The Nukleation is here relatively light controllably, because the bottom Nukleationsbedingungen the seeds can loose-grow immediately.

Attached files:


Patents:
DE 102,007,028,293
DE 102,007,028,293

Inventor(s): SCHRECK MATTHIAS [DE]; GSELL STEFAN [DE]; FISCHER MARTIN [DE]

Type of Offer: Sale



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