Method for Producing a Material Containing Zinc Oxide and a Semiconductor Element with a Material Containing Zinc Oxide
The invention relates, amongst other things to a method with the features given in the generic part of claim 1. According to the invention, a p-doped zinc oxide-containing material (30, 60, 125, 225, 325) is produced, wherein the p-doping is carried out during the growth of the material by a nitrogen-doping and the growth temperature during the growth and the doping of the zinc oxide-containing material is in the range 150 DEG C to 400 DEG C.
HENNEBERGER FRITZ [DE]; SADOFEV SERGEY [DE]
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